Publikationen

2013

Frank Schnieder, Matthias Rudolph
"Thermal Coupling in AlGaN/GaN Power Transistors," Frequenz. Volume 67,
Issue 1-2, Pages 21–26, January 2013, DOI: 10.1515/freq-2012-0031

F. Schnieder, O. Bengtsson, F.-J. Schmückle, M. Rudolph, W. Heinrich,
„Simulation of RF Power Distribution in a Packaged GaN Power Transistor
Using an Electro-Thermal Large-Signal Description,“
to be published in IEEE Trans. Microwave Theory Tech., vol. 61, 2013.

Matthias Rudolph, Ralf Doerner,
"Towards a Large-Signal Noise Model for GaN HEMT Devices"
to be published in Dig. European Microwave Integrated Circuits Conf.
(EuMIC), 2013

2012

Ulrich L. Rohde, Matthias Rudolph,
RF / Microwave Circuit Design for Wireless Applications, 2nd ed.
Hoboken, NJ, USA: John Wiley & Sons, 2012.
ISBN 978-0-470-90181-6

Matthias Rudolph, Ralf Doerner, Eric Ngnintedem, Wolfgang Heinrich,
"Noise Modeling of GaN HEMT Devices"
in: Dig. European Microwave Integrated Circuits Conf (EuMIC), 2012, pp.
159-162.

Cristina Andrei, Helmut Kautge, Ralf Doerner, Olof Bengtsson, Serguei A.
Chevtchenko, Wolfgang Heinrich, Matthias Rudolph
"Highly Rugged X-Band GaN Low Noise Amplifiers",
6th Space Agency – MOD Round Table Workshop on Wide Bandgap
Semiconductors and Components, ESA-ESTEC, Noordwijk, NL, 2012, P09.

Cristina Andrei, Ralf Doerner, Olof Bengtsson, Serguei A. Chevtchenko,
Wolfgang Heinrich, Matthias Rudolph,
"Highly Linear X-Band GaN-Based Low-Noise Amplifier",
in: Dig. U.R.S.I. International Symposium on Signals, Systems and
Electronics (ISSSE) 2012, S10.2.

M. Rudolph
“Properties of GaN for Low Noise Front Ends”
IEEE MTT-S Intl. Microwave Symp. 2012,
Workshop WFE „Gallium Nitride for Low Noise Amplifier Applications“,
Juni 2012.

F. Schnieder, F.-J. Schmückle, W. Heinrich, M. Rudolph
"An Analysis of Source Connections in GaN Power Transistor Packages"
in: Proc. German Microwave Conf., 2012, pp 64-67.

2011

F. Lenk, R. Doerner, A. Rumiantsev, M. Rudolph
„Calibration Residual Error Propagation Analysis Using Conformal Mapping“ 77th ARFTG Microwave Measurement Conference, 2011, Paper 2-4

M. Rudolph, Ch. Fager, D.E. Root (eds.)
„Nonlinear Transistor Model Parameter Extraction Techniques“Cambridge: Cambridge University Press, 2011ISBN-13: 978-0521762106.

M. Rudolph,
„Introduction“
in: M. Rudolph, Ch. Fager, D.E. Root (eds.),
„Nonlinear Transistor Model Parameter Extraction Techniques“
Cambridge: Cambridge University Press, 2011

J. Engelmann, F.-J. Schmückle, M. Rudolph,
„Large and packaged Transistors“
in: M. Rudolph, Ch. Fager, D.E. Root (eds.),
„Nonlinear Transistor Model Parameter Extraction Techniques“
Cambridge: Cambridge University Press, 2011

2010

M. Rudolph,
„Highly Robust GaN-Based Low-noise Amplifiers“
Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, 19. Juli 2010.

Matthias Rudolph, Peter Heymann, Hermann Boss,
"Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods"
IEEE Microwave Magazine, Vol. 11 , nr. 6, pp. 110 - 121, June 2010
DOI: 10.1109/MMM.2010.937715

M. Rudolph, W. Heinrich,
„Assessment of power-transistor package models: distributed versus lumped approach“
in: Dig. European Microwave Integrated Circuits Conf (EuMIC), 2010.

Matthias Rudolph,
„Compact HBT modeling: status and challenges“,
in: IEEE MTT-S Intl. Microwave Symp. Dig. 25.-27. Mai 2010, Anaheim,
CA.DOI 10.1109/MWSYM.2010.5517597

O. Bengtsson, G. van der Bent, M. Rudolph, J. Würfl, M. van Heijningen, F.E. van Vliet,
„GaN-HEMT VSWR Ruggedness and Amplifier Protection“
Microwave Technology and Techniques Workshop 2010, 10-12 Mai 2010, ESA-ESTEC, Noordwijk, NL.

H. Mostardinha, P. M. Cabral, N. B. Carvalho, P. Kurpas, M. Rudolph, J. Würfl, J. C. Pinto, A. Barnes, F. Garat,
„GaN RF Oscillator Used in Space Applications“,
in: Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC) 2010, 26.-27. April 2010, Göteborg, Schweden, pp. 50 - 53
DOI: 10.1109/INMMIC.2010.5480142

M. Rudolph,
„Noise modeling of GaAs HBTs“
Institutskolloquium, IHP Frankfurt (Oder), 20. April 2010.

Matthias Rudolph,
„Modeling GaN Power Transistors“
in Proc. IEEE Wireless and Microwave Conf (WAMICON), 11.-12. April 2010, Melbourne Beach, FL, pp. 1-4
DOI: 10.1109/WAMICON.2010.5461846

Armin Liero, Mike Dewitz, Silvio Kühn, Nidhi Chaturvedi, Jijun Xu, Matthias Rudolph,
„On the Recovery Time of Highly Robust Low-Noise Amplifiers“,
IEEE Trans. Microwave Theory Tech., vol. 58. nr. 4, pp. 781 - 787, April 2010.
DOI: 10.1109/TMTT.2010.2041519

Cristina Andrei, Armin Liero, Richard Lossy, Wolfgang Heinrich, Matthias Rudolph,
„Highly Linear Broadband GaN-based Low-noise Amplifier“
in: Dig. German Microwave Conf., 15.-17. März 2010, pp. 36 – 38.

Jens Flucke, Frank Schnieder, Franz-Josef Schmückle, Wolfgang Heinrich, Matthias Rudolph,
„On the magnetic coupling between bondwires in power-transistor packages“
in: Dig. German Microwave Conf., 15.-17. März 2010, pp. 90 – 93.